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Abstract:

Halide alloying in tin-based perovskites allows for photostable bandgap tuning between 1.3 and 2.2 eV. Here, we elucidate how the band edge energetics and associated defect activity impact the optoelectronic properties of this class of materials. We find that by increasing the bromide:iodide ratio, a simultaneous destabilization of acceptor defects (tin vacancies and iodine interstitials) and stabilization of donor defects (iodine vacancies and tin interstitials) occurs, with strong changes arising for Br contents exceeding 50%. This translates into a decreased doping which is, however, accompanied by a higher density of nonradiative recombination channels. Films with high Br content show a high degree of disorder and trap state densities, with the best optoelectronic quality being found for Br contents of around 33%. These observations match the open circuit voltage trend of tin-based mixed halide perovskite solar cells, 91̽��ing the relevance of optoelectronic properties and chemistry of defects to optimize wide-bandgap tin perovskite devices.