Prof Yulin Chen: Publications

A VUV sub-micron hotspot for photoemission spectroscopy

Vacuum ultraviolet (VUV) lasers have exhibited great potential as the light source for various spectroscopies, which, if they can be focused into a smaller beam spot, will not only allow investigation of mesoscopic materials but also find applications in manufacture of nano-objects with excellent precision. Towards this goal, scientists in China invented a 177 nm VUV laser system that can achieve a record-small (<1 μm) focal spot at a long focal length (~45 mm). This system can be re-equipped for usage in low-cost ARPES and might benefit quantum materials, condensed matter physics and nanophotonics.

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Chn. J. Lumin. Chinese Academy of Science 2001:3 (2001) 218

Authors:

Liu C. H., Zhu J. J., Lin B. X., Chen Y. L., Peng C., Yang Z., Fu Z. X

Electrical Properties of the ZnO/Si Heterostructure

Chinese Physics Letters 18:8 (2001) 1108

Abstract:

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.

The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology IOP Publishing 12:9 (1997) 1140

Authors:

GLB Houston, Y Chen, J Singleton, NJ Mason, PJ Walker

Improved photoluminescence from electrochemically passivated GaSb

Semiconductor Science and Technology IOP Publishing 12:4 (1997) 413

Authors:

A Salesse, R Alabedra, Y Chen, M Lakrimi, RJ Nicholas, NJ Mason, PJ Walker

One dimensional transport and gating of InAs/GaSb structures

Superlattices and Microstructures Elsevier 15:1 (1994) 41

Authors:

Y Chen, DM Symons, M Lakrimi, A Salesse, GB Houston, RJ Nicholas, NJ Mason, PJ Walker

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Prof Yulin Chen

Research theme

Sub department

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Authors:

Electrical Properties of the ZnO/Si Heterostructure

Abstract:

The interface properties of MIS structures on anodically oxidized GaSb

Authors:

Improved photoluminescence from electrochemically passivated GaSb

Authors:

One dimensional transport and gating of InAs/GaSb structures

Authors:

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91̽��

Prof Yulin Chen

Research theme

Sub department

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Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Authors:

Electrical Properties of the ZnO/Si Heterostructure

Abstract:

The interface properties of MIS structures on anodically oxidized GaSb

Authors:

Improved photoluminescence from electrochemically passivated GaSb

Authors:

One dimensional transport and gating of InAs/GaSb structures

Authors: