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Abstract:

We report a high-resolution angle-resolved photo-emission spectroscopy study of the evolution of the electronic structure of FeSe1-xSx single crystals. Isovalent S substitution onto the Se site constitutes a chemical pressure which subtly modifies the electronic structure of FeSe at high temperatures and induces a suppression of the tetragonal-symmetry-breaking structural transition temperature from 87K to 58K for x=0.15. With increasing S substitution, we find smaller splitting between bands with dyz and dxz orbital character and weaker anisotropic distortions of the low temperature Fermi surfaces. These effects evolve systematically as a function of both S substitution and temperature, providing strong evidence that an orbital ordering is the underlying order parameter of the structural transition in FeSe1-xSx. Finally, we detect the small inner hole pocket for x=0.12, which is pushed below the Fermi level in the orbitally-ordered low temperature Fermi surface of FeSe.

Abstract:

Magnetoresistivity \r{ho}xx and Hall resistivity \r{ho}xy in ultra high magnetic fields up to 88T are measured down to 0.15K to clarify the multiband electronic structure in high-quality single crystals of superconducting FeSe. At low temperatures and high fields we observe quantum oscillations in both resistivity and Hall effect, confirming the multiband Fermi surface with small volumes. We propose a novel and independent approach to identify the sign of corresponding cyclotron orbit in a compensated metal from magnetotransport measurements. The observed significant differences in the relative amplitudes of the quantum oscillations between the \r{ho}xx and \r{ho}xy components, together with the positive sign of the high-field \r{ho}xy , reveal that the largest pocket should correspond to the hole band. The low-field magnetotransport data in the normal state suggest that, in addition to one hole and one almost compensated electron bands, the orthorhombic phase of FeSe exhibits an additional tiny electron pocket with a high mobility.