Dr Dharmalingam Prabhakaran: Publications

Importance of XY anisotropy in Sr2IrO4 revealed by magnetic critical scattering experiments

Physical Review B American Physical Society (APS) 92:2 (2015) 020406

Authors:

JG Vale, S Boseggia, HC Walker, R Springell, Z Feng, EC Hunter, RS Perry, D Prabhakaran, AT Boothroyd, SP Collins, HM Rønnow, DF McMorrow

Crystal field states of Tb3+ in the pyrochlore spin liquid Tb2Ti2O7 from neutron spectroscopy

Physical Review B American Physical Society (APS) 91:22 (2015) 224430

Authors:

AJ Princep, HC Walker, DT Adroja, D Prabhakaran, AT Boothroyd

Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2

Physical Review Letters American Physical Society (APS) 114:11 (2015) 117201

Authors:

A Narayanan, MD Watson, SF Blake, N Bruyant, L Drigo, YL Chen, D Prabhakaran, B Yan, C Felser, T Kong, PC Canfield, AI Coldea

A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons

Physica Status Solidi - Rapid Research Letters Wiley 9:2 (2015) 130-135

Authors:

Piet Scho nherr, Shilei Zhang, YQ Liu, P Kusch, S Reich, T Giles, D Daisenberger, D Prabhakaran, Y Chen, Thorsten Hesjedal

Abstract:

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ~38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.

A new topological insulator built from quasi one-dimensional atomic ribbons

Physica Status Solidi Rapid Research Letters 9:2 (2015) 130-135

Authors:

P Schönherr, S Zhang, Y Liu, P Kusch, S Reich, T Giles, D Daisenberger, D Prabhakaran, Y Chen, T Hesjedal

Abstract:

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.

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