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91探花
Herz Group

Prof Laura Herz FRS

Professor of Physics

Sub department

  • Condensed Matter Physics

Research groups

  • Semiconductors group
  • Advanced Device Concepts for Next-Generation Photovoltaics
Laura.Herz@physics.ox.ac.uk
  • About
  • Publications

Impact of Charge Transport Layers on the Structural and Optoelectronic Properties of Coevaporated Cu 2 AgBiI 6

ACS Applied Materials & Interfaces American Chemical Society 17:28 (2025) 40363-40374

Authors:

Jae Eun Lee, Marcello Righetto, Benjamin WJ Putland, Siyu Yan, Joshua RS Lilly, Snigdha Lal, Heon Jin, Nakita K Noel, Michael B Johnston, Henry J Snaith, Laura M Herz

Abstract:

The copper鈥搒ilver鈥揵ismuth鈥搃odide compound Cu2AgBiI6 has emerged as a promising lead-free and environmentally friendly alternative to wide-bandgap lead-halide perovskites for applications in multijunction solar cells. Despite its promising optoelectronic properties, the efficiency of Cu2AgBiI6 is still severely limited by poor charge collection. Here, we investigate the impact of commonly used charge transport layers (CTLs), including poly颅[bis颅(4-phenyl)颅(2,4,6-trimethylphenyl)颅amine] (PTAA), CuI, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), and SnO2, on the structural and optoelectronic properties of coevaporated Cu2AgBiI6 thin films. We reveal that while organic transport layers, such as PTAA and PCBM, form a relatively benign interface, inorganic transport layers, such as CuI and SnO2, induce the formation of unintended impurity phases within the CuI鈥揂gI鈥揃iI3 solid solution space, significantly influencing structural and optoelectronic properties. We demonstrate that identification of these impurity phases requires careful cross-validation combining absorption, X-ray diffraction and THz photoconductivity spectroscopy because their structural and optoelectronic properties are very similar to those of Cu2AgBiI6. Our findings highlight the critical role of CTLs in determining the structural and optoelectronic properties of coevaporated copper鈥搒ilver鈥揵ismuth鈥搃odide thin films and underscore the need for advanced interface engineering to optimize device efficiency and reproducibility.

Ultrafast Nanoscopy of Carrier Dynamics and Nanoscale Morphology in Metal Halide Perovskites

Institute of Electrical and Electronics Engineers (IEEE) 00 (2025) 1-1

Authors:

Svenja Nerreter, Martin Zizlsperger, Qimu Yuan, Kilian B Lohmann, Fabian Sandner, Felix Schiegl, Christian Meineke, Yaroslav A Gerasimenko, Laura M Herz, Thomas Siday, Markus A Huber, Michael B Johnston, Rupert Huber

Abstract:

The rise of metal halide perovskites has prompted a revolution in optoelectronics research [1]. Yet a comprehensive understanding of the vertical charge transport that underlies the soaring efficiencies of perovskite-based solar cells has remained challenging owing to the materials' nanocrystalline structure [2] and competing crystal phases [3]. Here, we simultaneously probe the intrinsic out-of-plane charge-carrier diffusion and the nanoscale morphology by pushing depth-sensitive terahertz near- field nano-spectroscopy [4] to extreme subcycle timescales [5]. Evanescent terahertz fields at the apex of a metallic tip probe ultrafast dynamics of photocarriers in $\text{FA}_{0}.{}_{83}\text{Cs}_{0.17}\text{Pb}(\mathrm{I}_{1}{}_{-\mathrm{x}}\mathrm{C}1_{\mathrm{x}})_{3}$ films with nanoscale spatial resolution (Fig. 1 a). By analysing characteristic phonon signatures in the spectral response, we distinguish domains of the photo active cubic $\alpha$ -phase from the trigonal 未-phase and $\text{PbI}_{2}$ nano-islands (Fig. 1 b). To examine the impact of these nanoscale inhomogeneities on carrier dynamics, we monitor the peak pump-induced signal as a function of pump delay time $t_{\mathrm{p}}$ (Fig. 1c). Notably, the full pump-induced waveforms at different $t_{\mathrm{p}}$ (Fig. 1d) show a deeply subcycle time shift $\Delta t$, which can be microscopically linked to a diffusion-driven change in the vertical carrier distribution with $t_{\mathrm{r}}$ (Fig. 1e, inset). Com-bining a straightforward rate equation model with the finite-dipole model, we extract the evolution of the out-of-plane carrier density profile from $\Delta t$ (Fig. 1e). Mapping the out-of-plane diffusion coefficient $D$ along a line across different grains, including $\alpha$ -phase grains and $\text{PbI}_{2}$ contaminations, we find a homogeneous value of $D=(0.2\pm 0.1)\ \text{cm}^{2}\mathrm{s}^{-1}$, which is surprisingly immune to compositional and structural variations (Fig. 1 f). This robustness of vertical diffusion may contribute to the exceptional performance of perovskite-based devices. Linking in situ carrier transport with nanoscale morphology and chemical composition could introduce a paradigm shift for the analysis and optimization of next-generation optoelectronics that are based on nanocrystalline materials.

Ruddlesden鈥揚opper Defects Act as a Free Surface: Role in Formation and Photophysical Properties of CsPbI 3

Advanced Materials Wiley (2025) 2501788

Authors:

Weilun Li, Qimu Yuan, Yinan Chen, Joshua RS Lilly, Marina R Filip, Laura M Herz, Michael B Johnston, Joanne Etheridge

Abstract:

The perovskite semiconductor, CsPbI3, holds excellent promise for solar cell applications due to its suitable bandgap. However, achieving phase鈥恠table CsPbI3 solar cells with high power conversion efficiency remains a major challenge. Ruddlesden鈥揚opper (RP) defects have been identified in a range of perovskite semiconductors, including CsPbI3. However, there is limited understanding as to why they form or their impact on stability and photophysical properties. Here, the prevalence of RP defects is increased with increased Cs鈥恊xcess in vapor鈥恉eposited CsPbI3 thin films while superior structural stability but inferior photophysical properties are observed. Significantly, using electron microscopy, it is found that the atomic positions at the planar defect are comparable to those of a free surface, revealing their role in phase stabilization. Density functional theory (DFT) calculations reveal the RP planes are electronically benign, however, antisites observed at RP turning points are likely to be malign. Therefore it is proposed that increasing RP planes while reducing RP turning points offers a breakthrough for improving both phase stability and photophysical performance. The formation mechanism revealed here can apply more generally to RP structures in other perovskite systems.

Odd-even effects in lead-iodide-based Ruddlesden鈥揚opper 2D perovskites 鈥

Journal of Materials Chemistry A: materials for energy and sustainability Royal Society of Chemistry (2025)

Authors:

Maryam Choghaei, Maximilian Schiffer, Viren Tyagi, Marcello Righetto, Jiaxing Du, Maximilian Buchm眉ller, Kai Oliver Brinkmann, Geert Brocks, Patrick G枚rrn, Laura M Herz, Shuxia Tao, Thomas Riedl, Selina Olthof

Abstract:

Two-dimensional (2D) halide perovskites are a versatile material class, exhibiting a layered crystal structure, consisting of inorganic metal鈥揾alide sheets separated by organic spacer cations. Unlike their 3D counterparts, 2D perovskites have less strict geometric requirements, allowing for a wider range of molecules to be incorporated. This potentially offers a way to engineer the properties of a 2D perovskite through adequate selection of the organic spacer cations. Our study systematically analyzes the effect of spacer cation length on the electronic and optical properties of Ruddlesden鈥揚opper lead-iodide-based 2D perovskites, using alkylammonium cations of varying chain lengths. Intriguingly, no linear correlation between interlayer distance and the optical gap or valence band position is observed in our measurements. Rather it matters whether the spacer cation contains an odd or even number of carbon atoms in the chain. Notably, these odd-even effects manifest in variations of ionization energy, optical gap as well as charge carrier mobility. Density functional theory calculations reproduce the changes in optical properties, allowing us to identify the underlying mechanism: while even-numbered carbon chains pack efficiently within the organic spacer layer, the shorter odd-numbered chains increase distortions. These distortions lead to variations in the Pb鈥揑鈥揚b bond angle within the inorganic sheets, resulting in the observed odd-even effect in the (opto-)electronic properties. This understanding will be helpful to make more informed choices regarding the incorporated spacer molecules which can potentially help to enhance performance when integrating such 2D perovskite interlayers into devices.

Oriented naphthalene-O-propylammonium-based (NOP)4AuBIIII8 (B = Au, Bi, Sb) Ruddlesden鈥揚opper two-dimensional gold double perovskite thin films featuring high charge-carrier mobility

Journal of the American Chemical Society American Chemical Society 147:20 (2025) 16992-17001

Authors:

Florian Wolf, Thanh Chau, Dan Han, Kieran B Spooner, Marcello Righetto, Patrick D枚rflinger, Shizhe Wang, Roman Guntermann, Rik Hooijer, David O Scanlon, Hubert Ebert, Vladimir Dyakonov, Laura M Herz, Thomas Bein

Abstract:

Two-dimensional perovskites show intriguing optoelectronic properties due to their anisotropic structure and multiple quantum well structure. Here, we report the first three gold-based Ruddlesden鈥揚opper type two-dimensional double perovskites with a general formula (NOP)4AuIBIIII8 (B = Au, Bi, Sb) employing naphthalene-O-propylammonium (NOP) as an organic cation. They were found to form highly crystalline thin films on various substrates, predominantly oriented in the [001] direction featuring continuous, crack-free film areas on the 渭m2 scale. The thin films show strong optical absorption in the visible region, with band gap energies between 1.48 and 2.32 eV. Density functional theory calculations 91探花 the experimentally obtained band gap energies and predict high charge-carrier mobilities and effective charge separation. A comprehensive study with time-resolved microwave conductivity (TRMC) and optical-pump-THz-probe (OPTP) spectroscopy revealed high charge-carrier mobilities for lead-free two-dimensional perovskites of 4.0 卤 0.2 cm2(V s)鈭1 and charge-carrier lifetimes in the range of 渭s. Photoconductivity measurements under 1 sun illumination demonstrated the material鈥檚 application as a photodetector, showing a 2-fold increase in conductivity when exposed to light.

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