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91̽»¨
One of the substrate layouts for our organic solar cells
Credit: AFMD Group

Moritz Riede

Professor of Soft Functional Nanomaterials

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Advanced Functional Materials and Devices (AFMD) Group
moritz.riede@physics.ox.ac.uk
Telephone: 01865 (2)72377 (office),01865 (2)82095 (lab)
  • About
  • Research
  • Teaching
  • Publications

Influence of hole-transport layers and donor materials on open-circuit voltage and shape of I-V curves of organic solar cells

Advanced Functional Materials 21:11 (2011) 2140-2149

Authors:

W Tress, K Leo, M Riede

Abstract:

The effect of injection and extraction barriers on flat heterojunction (FHJ) and bulk heterojunction (BHJ) organic solar cells is analyzed. The barriers are realized by a combination of p-type materials with HOMOs varying between -5.0 and -5.6 eV as hole-transport layer (HTL) and as donor in vacuum-evaporated multilayer p-i-metal small-molecule solar cells. The HTL/donor interface can be seen as a model for the influence of contacts in organic solar cells in general. Using drift-diffusion simulations we are well able to reproduce and explain the experimental I-V curves qualitatively. In FHJ solar cells the open-circuit voltage (Voc) is determined by the donor and is independent of the HTL. In BHJ solar cells, however, Voc decreases if injection barriers are present. This different behavior is caused by a blocking of the charge carriers at a spatially localized donor/acceptor heterojunction, which is only present in the FHJ solar cells. The forward current is dominated by the choice of HTL. An energy mismatch in the HOMOs leads to kinks in the I-V curves in the cases for which Voc is independent of the HTL. The influence of energy barriers (ΔE) for hole transport on the J-V curve is analyzed in experiments and simulations. The investigated system consists of different combinations of organic hole-transport layers (HTLs) and donors. Depending on the kind of barrier and the configuration of the donor/acceptor heterojunction changes in the open-circuit voltage (V oc) and the formation of S-kinks are observed and explained. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of C60F36 as low-volatility p-dopant in organic optoelectronic devices

Journal of Applied Physics 109:10 (2011)

Authors:

R Meerheim, S Olthof, M Hermenau, S Scholz, A Petrich, B Lssem, M Riede, K Leo, N Tessler, O Solomeshch

Abstract:

We demonstrate highly efficient small molecule organic light emitting diodes and organic solar cells based on the p-i-n-type structure using the fluorinated fullerene molecule C60F36 as p-dopant in the hole transport layer. We present synthesis, chemical analysis, and energy level investigation of the dopant as well as the conductivity of organic layers consisting of a matrix of N,N,N′,N′-tetrakis 4-methoxyphenyl- benzidine(MeO-TPD) or N,N′-[(Diphenyl-N,N′-bis)9, ? 9,-dimethyl-fluoren-2-yl]-benzidine(BF-DPB) doped by the fullerene compound. State of the art organic p-i-n devices containing C60F36 show efficiencies comparable to devices with the commonly used p-dopant2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). The advantages of the fullerene based dopant are the low volatility and high thermal stability, which is beneficial for device operation under elevated temperature. These properties make C60F36 highly attractive for the usage as p-dopant in a broad spectrum of organic p-i-n devices like organic light emitting diodes, solar cells, memories, or transistors. © 2011 American Institute of Physics.

Total charge amount as indicator for the degradation of small molecule organic solar cells

Solar Energy Materials and Solar Cells 95:5 (2011) 1278-1283

Authors:

M Hermenau, S Scholz, K Leo, M Riede

Abstract:

We show that the number of extracted charge carriers is a suitable measure to compare lifetime measurements on organic solar cells at different intensities. In detail, we used pin-structures with active layers containing a bulk heterojunction of Zincphthalocyanine (ZnPc) and C60. Extended lifetime measurements under constant monochromatic or white illumination at defined temperatures of 50 °C or 90 °C are done. On the one hand, we show that the number of extracted charge carriers is important to determine the degree of degradation. On the other hand, our results show that the energy of irradiated photons is significant for accelerated measurements. This is an major advantage for the realisation of accelerated lifetime measurements. Additionally, we find that not single charge carriers, but excitons cause the degradation of the observed solar cells. © 2010 Elsevier B.V. All rights reserved.

Homoleptic Co(II), Ni(II), Cu(II), Zn(II) and Hg(II) complexes of bis-(phenyl)-diisoindol-aza-methene.

Dalton Trans 40:14 (2011) 3476-3483

Authors:

Roland Gresser, Alexander Hoyer, Markus Hummert, Horst Hartmann, Karl Leo, Moritz Riede

Abstract:

The synthesis of five homoleptic transition metal complexes of bis-(phenyl)-diisoindol-aza-methene is described together with the optical, electrochemical and thermal properties of these compounds. Additionally, crystal structures for the Co and the Zn complex are reported.

Tetrapropyl-tetraphenyl-diindenoperylene derivative as a green absorber for high-voltage stable organic solar cells

Physical Review B - Condensed Matter and Materials Physics 83:16 (2011)

Authors:

J Meiss, M Hermenau, W Tress, C Schuenemann, F Selzer, M Hummert, J Alex, G Lackner, K Leo, M Riede

Abstract:

We present small molecule organic solar cells (SMOSC) based on flat heterojunctions (FHJ) of the alternative green donor 2,3,10,11-tetrapropyl-1,4, 9,12-tetraphenyl-diindeno[1,2,3-cd:1',2',3'-lm]perylene (P4-Ph4-DIP) and the fullerene C60. P4-Ph4-DIP absorbs in the green spectral range and thus fills the spectral gap that standard absorber materials (zinc or copper phthalocyanine for red and C60 for blue absorption) leave, thus allowing broad coverage of the sun spectrum, which is of major interest for tandem devices. The materials properties of P4-Ph4-DIP are studied, and SMOSC are characterized by current voltage, external quantum efficiency, and aging measurements. The solar cells display very high fill factors FF > 76% and open circuit voltages VOC of close to 1 V. Mismatch-corrected efficiencies of up to 1.9% are obtained. Aging measurements show that C 60 in conjunction with P4-Ph4-DIP yields extremely stable devices. We observe 88% of the initial efficiency after 2500 h illumination at 999 mW/cm2 illumination intensity, with no observable change in short-circuit current density. Furthermore, we also show that a systematic variation of donor thickness in FHJ can be combined with transfer matrix formalism-based optical simulations and the continuity equation for excitons to reliably determine the exciton diffusion length LD. A value of 9 ± 1 nm is found for P4-Ph4-DIP. © 2011 American Physical Society.

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