Modelling charge storage near full well in CCDs
Precision Astronomy with Fully Depleted CCDs Institute of Physics 12 (2017) C05008
Abstract:
The shape and size of the stored charge packet within a CCD pixel after exposure has implications for optimal device operation, susceptibility to radiation damage and modelling of dynamic charge collection effects such as the 鈥淏righter-Fatter Effect鈥. Above the full well capacity, phenomena such as bleed trails and surface charge loss occur. In this paper we discuss why accurately reproducing saturation effects in simulations based on electrostatics is difficult, and present an approach to modelling the storage of charge in CCD pixels using commercial semiconductor simulation software. We suggest experimental measurements which can be connected to such modelling. Full well measurements on a thick, high resistivity back illuminated sensor (the e2v CCD261) are presented.Development of the X-ray camera for the OGRE sub-orbital rocket
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 9915 (2016) 991506-991506-9
Models for dynamic correlated charge collection effects in thick CCDs
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 9602 (2015) 96020m
Technological developments of the OGRE focal plane array
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 9601 (2015) 960105-960105-11
Comparison of Point Spread Function in p- and n-Channel CCDs
Journal of Instrumentation IOP Publishing 10:08 (2015) c08007-c08007