Efficient Intersubband Scattering via Carrier-Carrier Interaction in Quantum Wells
Physical Review Letters 80:9 (1998) 1940-1943
Abstract:
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions. 漏 1998 The American Physical Society.Ultrafast dynamics of excitonic scattering and gain in narrow ZnCdSe/ZnSe multiple quantum wells
Journal of Crystal Growth Elsevier 184 (1998) 645-649
Ultrafast dynamics of excitonic scattering and gain in narrow ZnCdSe/ZnSe multiple quantum wells
J CRYST GROWTH 184 (1998) 645-649
Abstract:
Time-resolved photoluminescence has been used to investigate the optical properties of a narrow 25 Angstrom Zn0.8Cd0.2Se/ZnSe multiple quantum well structure as a function of carrier density and temperature. At low temperatures, it is found that the luminescence is excitonic over all densities up to and above threshold. The underlying gain mechanism in cleaved 380 mu m cavities is excitonic in nature. In the low-density regime, the luminescence remains excitonic up to room temperature. (C) 1998 Elsevier Science B.V. All rights reserved.Direct observation of the decay of a coherent polarization into an incoherent exciton population in quantum wells
Institute of Electrical and Electronics Engineers (IEEE) (1998) 225
Improving the signal-to-noise ratio of femtosecond luminescence upconversion by multichannel detection
Journal of the Optical Society of America B: Optical Physics 15:4 (1998) 1410-1417