Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

Physica E: Low-Dimensional Systems and Nanostructures 13:2-4 (2002) 896-899

Authors:

MB Johnston, A Corchia, A Dowd, EH Linfield, AG Davies, R McLaughlin, DD Arnone, M Pepper

Abstract:

We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of hot carrier dynamics both in bulk semiconductors and sophisticated heterostructures. 漏 2002 Elsevier Science Ltd. All rights reserved.

Optimisation of Growth Parameters for Photonic Crystal Structures

Institute of Electrical and Electronics Engineers (IEEE) (2002) 153-154

Authors:

P Atkinson, MB Johnston, HE Beere, DA Ritchie

Enhancement of THz emission from semiconductor devices

COMMAD 2002 PROCEEDINGS (2002) 281-284

Authors:

A Dowd, MB Johnston, DM Whittaker, AG Davies, EH Linfield

Enhancement of terahertz emission from semiconductor surfaces

THZ 2002: IEEE TENTH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS PROCEEDINGS (2002) 48-51

Authors:

MB Johnston, A Dowd, DM Whittaker, A Corchia, AG Davies, EH Linfield

Thermally stimulated luminescence in ion-implanted GaAs

JOURNAL OF LUMINESCENCE 96:2-4 (2002) PII S0022-2313(01)00219-8

Authors:

M Gal, LV Dao, E Kraft, MB Johnston, C Carmody, HH Tan, C Jagadish